Study on channel depletion in metal-oxide-semiconductor field effect transistor using top-view imaging through scanning capacitance microscopyNAITOU, Y; OGISO, H; KAMOHARA, S et al.Surface and interface analysis. 2009, Vol 41, Num 1, pp 34-37, issn 0142-2421, 4 p.Article

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Ambipolar charge injection and transport in a single pentacene monolayer islandHEIM, T; LMIMOUNI, K; VUILLAUME, D et al.Nano letters (Print). 2004, Vol 4, Num 11, pp 2145-2150, issn 1530-6984, 6 p.Article

Moore's law: new playground for quantum physicsVAN POSSUM, M; SCHOENMAKER, W; MAGNUS, W et al.Physica status solidi. B. Basic research. 2003, Vol 237, Num 1, pp 426-432, issn 0370-1972, 7 p.Article

Strain-engineered novel III-N electronic devices with high quality dielectric/semiconductor interfacesASIF KHAN, M; SHUR, M. S; SIMIN, G et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 1, pp 155-160, issn 0031-8965, 6 p.Conference Paper

Heterostructure field effect transistors based on nitride interfaces : Special section containing articles on galium nitride and related materialsMAJEWSKI, J. A; ZANDLER, G; VOGL, P et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 13, pp 3511-3522, issn 0953-8984Article

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Series resistance and mobility degradation factor in C-incorporated sige heterostructure p-type metal-oxide semiconductor field-effect transistorsKAR, G. S; MAIKAP, S; BANERJEE, S. K et al.Semiconductor science and technology. 2002, Vol 17, Num 9, pp 938-941, issn 0268-1242Article

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Electrothermal model of GaAs FET devices for fast PC implementationPESARE, M; GIORGIO, A; PERRI, A. G et al.IEE proceedings. Circuits, devices and systems. 2001, Vol 148, Num 1, pp 40-44, issn 1350-2409Article

Performance trade-offs by the use of high-K gate dielectrics in sub 100 nm channel length MOSFETsSBARMA, S; RAMGOPAL RAO, V.SPIE proceedings series. 2000, pp 896-899, isbn 0-8194-3601-1Conference Paper

Nonvolatile, high density, high performance phase change memoryWICKER, G.SPIE proceedings series. 1999, pp 2-9, isbn 0-8194-3492-2Conference Paper

Magneto-Coulomb oscillation in ferromagnetic single electron transistorsSHIMADA, H; ONO, K; OOTUKA, Y et al.Journal of the Physical Society of Japan. 1998, Vol 67, Num 4, pp 1359-1370, issn 0031-9015Article

Vertical 100 nm Si-p channel JFET grown by selective epitaxyLANGEN, W; VESCAN, L; LOO, R et al.Applied surface science. 1996, Vol 102, pp 252-254, issn 0169-4332Conference Paper

Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistorPATEL, D; MENONI, C. S; SCHULT, D. W et al.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 669-672, issn 0022-3697Conference Paper

Extraction of SiO₂/SiC interface trap profile in 4H- and 6h-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°CYANQING DENG; WEI WANG; QIZHI FANG et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 618-624, issn 0361-5235, 7 p.Article

High performance LTPS TFT with very large grains produced by sequential lateral crystallizationPARK, S. J; KING, S. H; KU, Y. M et al.EPJ. Applied physics (Print). 2005, Vol 31, Num 3, pp 165-168, issn 1286-0042, 4 p.Article

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Ni(Pt) alloy silicidation on (100) Si and poly-silicon linesPEY, K. L; LEE, P. S; MANGELINCK, D et al.Thin solid films. 2004, Vol 462-63, pp 137-145, issn 0040-6090, 9 p.Conference Paper

Sub-100 nm MOSFET fabrication with low temperature resist trimming processMATHEW, Shajan; NAGARAJAN, Ranganathan; BERA, L. K et al.Thin solid films. 2004, Vol 462-63, pp 63-66, issn 0040-6090, 4 p.Conference Paper

The influence of composition and unintentional doping on the two-dimensional electron gas density in aigan/gan heterostructuresDAVIDSSON, S. K; GURUSINGHE, M; ANDERSSON, T. G et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 440-444, issn 0361-5235, 5 p.Conference Paper